| PART |
Description |
Maker |
| NSS1C200LT1G |
100V 2A Low Vce(sat) PNP SOT-23 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
|
ON Semiconductor
|
| PBSS5230PAP |
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| TSB142407 TSB1424CY TSB1424 |
Low Vcesat PNP Transistor
|
Taiwan Semiconductor Company, Ltd
|
| PBSS3515F |
15 V low VCEsat PNP transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2PB1424 |
20 V, 3 A PNP low VCEsat transistor
|
Philips Semiconductors / NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PBSS5350Z |
50 V low VCEsat PNP transistor
|
NXP Semiconductors
|
| PBSS5350D |
50 V low VCEsat PNP transistor
|
NXP Semiconductors
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| PBSS303PD |
3 A PNP low VCEsat (BISS) transistor
|
Philips Semiconductors
|
| PBSS3515VS |
15 V low VCEsat PNP double transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PBSS4041PX |
60 V, 5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
