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HYB3164160T - 4M x 16-Bit Dynamic RAM 4米16位动态随机存储器

HYB3164160T_5045894.PDF Datasheet


 Full text search : 4M x 16-Bit Dynamic RAM 4米16位动态随机存储器


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PART Description Maker
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
http://
SIEMENS A G
SIEMENS AG
MH28S72PJG-5 MH28S72PJG-6 MH28S72PJG-7 9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
9 /663 /676 /416-BIT ( 134 /217 /728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
KPSE 19C 19#20 SKT RECP
Circular Connector; Body Material:Aluminum Alloy; Series:KPSE07; No. of Contacts:19; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
Circular Connector; Body Material:Aluminum Alloy; Series:KPSE07; No. of Contacts:19; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin RoHS Compliant: No
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL    4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
THM361020S-10 THM361020S-80 THM361020SG-10 THM3610 Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1048576 WORDS x 36 BIT DYNAMIC RAM MODULE
1,048,576 WORDS x 36 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 36 BIT DYNAMIC RAM MODULE
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
HYB5118160BSJ-50- HYB3118160BSJ-50 HYB3118160BSJ-6 1M x 16-Bit Dynamic RAM 1k Refresh 100万16位动态随机存储器经销商刷
1M×16-Bit Dynamic RAM(1M×16动态RAM(快速页面模)
Siemens Semiconductor Group
SIEMENS AG
HYM361140GS-70 HYM361140GS-60 HYM361140S-70 HYM361 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 100万36位动态RAM模块米18位动态随机存储器模块
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module) 1M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
M5M4416P M5M4416P-12 M5M4416P-15 65536 Bit (16384 Word by 4 Bit) Dynamic Ram
65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
HYB5117800BSJ-70 HYB5117800BSJ-60 HYB5117800BSJ-50 -2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
MK31VT432-10YC 4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK)(4分字× 32位同步动态内存模块)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块)
From old datasheet system
OKI SEMICONDUCTOR CO., LTD.
HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY 2M x 8 Bit 2k 5 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM
2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode)
2M x 8-Bit Dynamic RAM
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
IC41C82002S IC41LV82002S IC41LV82002S-60T IC41C820 2Mx8 bit Dynamic RAM with EDO Page Mode
DYNAMIC RAM, EDO DRAM
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY 8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
 
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