| PART |
Description |
Maker |
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| TC1102 |
Super Low Noise GaAs FETs
|
Transcom
|
| TC2101 |
Plastic Packaged Low Noise PHEMT GaAs FETs
|
Transcom, Inc.
|
| TC3918 |
Packaged Single-Bias Low Noise PHEMT GaAs FETs
|
Transcom, Inc.
|
| 2N4221 2N4222 2N4220 PN3685 PN3686 PN3687 PN4360 2 |
Junction FETs Low Frequency/ Low Noise N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
|
http://
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| TC2676 |
2 W Low-Cost Packaged PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TC2481 |
0.5 W Low-Cost Packaged PHEMT GaAs Power FETs
|
Transcom, Inc.
|
| TIM1213-4L |
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
|
Toshiba Corporation
Toshiba Semiconductor
|
| NE71083-07 NE710 NE71000 NE71083-06 NE71083-08 NE7 |
90 GHz, low noise Ku-K band GaAs MESFET
LOW NOISE Ku-K BAND GaAs MESFET 低噪声谷K波段GaAs MESFET器件
|
NEC Corp.
NEC, Corp.
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| MGF1302 |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
