| PART |
Description |
Maker |
| 1SS302TE85LF 1SS302T5LFH |
Ultra High Speed Switching Applications
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| BAW56W Q62702-A1031 |
Silicon Switching Diode Array (For high speed switching applications Common anode)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Siemens Group
Siemens Semiconductor Group
Infineon
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| S6785G |
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED SWITCHING AND CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK182507 2SK1825 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
| IKP08N65H5 IKP08N65H5-15 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| H7N0307LD-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N1506P-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 1SS119 |
Silicon Epitaxial Planar Diode for High Speed Switching
|
Hitachi Semiconductor
|
| FC807 |
High-Speed Switching Composite Diode Anode Common
|
SANYO[Sanyo Semicon Device]
|
