PART |
Description |
Maker |
FFPF08S60ST12 |
8A, 600V STEALTHTM II Rectifier
|
Fairchild Semiconductor
|
FGB30N6S2D FGH30N6S2D FGP30N6S2D FGB30N6S2DT |
Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC :3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
SF10A01 SF10A02 SF10A04 SF10A03 SF10A05 SF10A06 |
Glass Passivated Super Fast Recovery Rectifie
|
YENYO TECHNOLOGY Co., Ltd
|
ISL9K460P3 |
4A, 600V StealthDual Diode 4 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 4A, 600V Stealth⑩ Dual Diode 4A, 600V Stealth Dual Diode
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module (DISCRETE/OPTO)
|
Toshiba Semiconductor
|
IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 5A条一(c)|52AA INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
ISL9R460PF2 ISL9R460PF2NL |
4A, 600V Stealth ™, Diode, TO-220F Package 4A, 600V Stealth Diode From old datasheet system 4A / 600V Stealth Diode
|
Fairchild Semiconductor
|
IRG4BC10SD-L IRG4BC10SD-S |
600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak package 600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A)
|
IRF[International Rectifier]
|
IRG4PC50K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)
|
IRF[International Rectifier]
|