| PART |
Description |
Maker |
| TC58V64BFT |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| MX26L6420 MX26L6420MC-12 MX26L6420MC-90 MX26L6420M |
64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM
|
MCNIX[Macronix International]
|
| AMD27C256 AM27C256-120 AM27C256-120EC AM27C256-120 |
256 Kilobit (32,768 x 8-Bit) CMOS EPROM
Circular Connector; No. of Contacts:5; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
8-input positive-NAND gates 14-SO 0 to 70 256千比特（32,768 × 8位）的CMOS存储
256 Kilobit (32,768 x 8-Bit) CMOS EPROM 256千比特（32,768 × 8位）的CMOS存储
256 Kilobit (32,768 x 8-Bit) CMOS EPROM 32K X 8 OTPROM, 90 ns, PDSO32
Quadruple 2-Input Multiplexers With Storage 16-PDIP 0 to 70
8-Line To 3-Line Priority Encoder 16-PDIP 0 to 70
Universal shift / storage registers 20-SOIC 0 to 70
8-input positive-NAND gates 14-SOIC 0 to 70
8-input positive-NAND gates 14-PDIP 0 to 70
8-Line To 3-Line Priority Encoder 16-SO 0 to 70
Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70
256 Kilobit (32/768 x 8-Bit) CMOS EPROM
|
Cypress Semiconductor, Corp.
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器
2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70
2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85
4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM
From old datasheet system
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM
Macronix International Co., Ltd.
|
| CY27C256 CY27C256-120 CY27C256-120JC CY27C256-120P |
32K x 8-Bit CMOS EPROM 32K X 8 UVPROM, 55 ns, CDIP28
32K x 8-Bit CMOS EPROM 32K X 8 OTPROM, 150 ns, PDSO32
CONN PLUG HOUSING HA SIZE2 UPPER
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| K9F1208U0M-YIB0 K9F1208U0M-YCB0 DSK9F1208U0M |
64M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9 |
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32
Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes
IC DRIVER 1/2BRDG LOW SIDE 16DIP
DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
