PART |
Description |
Maker |
M500460R1DK M500460R1DK-R M500420R1DK M500420R1DK- |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPVCXO
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MTRONPTI[MTRONPTI]
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M50021DTDK-R M500278TLK-R |
9x16 mm FR-4, 5.0 Volt, CMOS/TTL/PECL/LVDS, HPXO
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MTRONPTI
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M500320R2LK M500320R1PK-R M500370R1LK-R M500370R1P |
9x16 mm FR-4, 3.3 Volt, CMOS/TTL/PECL/LVDS, HPVCXO 9x16毫米的FR - 43.3伏,路CMOS / TTL / PECL LVDS的,HPVCXO 9x16 mm FR-4, 3.3 Volt, CMOS/TTL/PECL/LVDS, HPVCXO 9x16毫米的FR - 4.3伏,路CMOS / TTL / PECL LVDS的,HPVCXO
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MtronPTI
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VCC4 VCC4-C3E-50M000 VCC4-G3E-50M000 VCC4-E3E-50M0 |
1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator CRYSTAL OSCILLATOR, CLOCK, 50 MHz, CMOS OUTPUT 1.8, 2.5, 3.3, 5.0 volt CMOS Oscillator 1.8.5.3.0伏的CMOS振荡
|
Vectron International, Inc.
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S29CD-J S29CL032J S29CD016J S29CD016J0JFAI000 S29C |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
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AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
A29L008UV-90 A29L008TV-90U A29L008TV-90 A29L008TV- |
90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory 1M X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory From old datasheet system
|
AMICC[AMIC Technology]
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IDT72V3644 IDT72V3624 IDT72V3634 IDT72V3634L10 IDT |
512 x 36 x 2 SyncBiFIFO, 3.3V 3.3 VOLT CMOS SyncBiFIFO? 3.3 VOLT CMOS SyncBiFIFO WITH BUS-MATCHING 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
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IDT[Integrated Device Technology] Integrated Device Techn...
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AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只,同时作业快闪记忆
|
Advanced Micro Devices, Inc. http://
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AM29LV081B AM29LV081B-120EC AM29LV081B-120ECB AM29 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory Gate Driver; Package: PG-DSO-8; RthJA (max): -; 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位米8位)的CMOS 3.0伏特,只有扇区擦除闪 CORECONTROL™ Gate Driver 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位1米8位)的CMOS 3.0伏特,只有扇区擦除闪
|
AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash EEPROM EEPROM
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TE Connectivity, Ltd.
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