| PART |
Description |
Maker |
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| CGD982HCI |
1 GHz, 22 dB gain GaAs high output power doubler CGD982HCI<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| TGA3503-SM-15 |
2-30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| TGA3504-SM TGA3504-SM-15 |
2 to 30 GHz GaAs Wideband Gain Block
|
TriQuint Semiconductor
|
| CGY1041 |
1 GHz - 21 dB gain GaAs push-pull amplifier
|
NXP Semiconductors
|
| LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications
17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN
17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
NEC Corp.
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK/ DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC313 |
GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6.0 GHz
|
Hittite Microwave Corporation
|
| HMC626ALP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 1 GHz
|
Hittite Microwave Corpo...
|
| HMC627LP5 HMC627LP5E |
0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz
|
Hittite Microwave Corporation
|
| HMMC-3022 |
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路定标
DC-12 GHz High Efficiency GaAs HBT MMIC Divide-by-2 Prescaler(DC-12 GHz 高效砷化镓HBT单片微波集成电路2定标
|
Agilent(Hewlett-Packard)
|
| CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
