| PART |
Description |
Maker |
| XP01112 XP1112 XP01112XP1112 |
XP01112 (XP1112) - Composite Transistors
SILICON PNP EPITAXIAL PLANER TRANSISTOR
Composite Device - Composite Transistors
|
PANASONIC[Panasonic Semiconductor]
|
| RT3K66M |
Composite Transistor For high speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
| XN0121M |
Composite Device - Composite Transistors 复合设备-复合晶体
Silicon NPN epitaxial planar type
|
Panasonic Industrial Solutions
Panasonic Semiconductor
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| RT3C99M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3XAAM |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3YA7M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| RT3XBBM |
Composite Transistor
|
Isahaya Electronics Corporation
|
| XP05501 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Honeywell International, Inc.
Panasonic
|
| XN04114 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN01116 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN6116 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Panasonic, Corp.
|
