PART |
Description |
Maker |
HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
UPD44323362 UPD44323362F1-C40-FJ1 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC Corp.
|
UPD4483362 UPD4483362GF-A75 |
8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC Corp. NEC[NEC]
|
HM64YGB36100-15 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
MCM69L820AZP9R MCM69L738A MCM69L738AZP8.5 MCM69L73 |
4M Late Write 2.5 V I/O
|
MOTOROLA[Motorola, Inc]
|
MCM69R818CZP4.4 MCM69R736CZP4.4 MCM69R736CZP4.4R M |
4M Late Write HSTL
|
Motorola, Inc
|
MCM63R736 |
4M Late Write HSTL From old datasheet system
|
Motorola
|
MCM63R918 MCM63R836 |
8MBit Synchronous Late Write Fast Static RAM(8M位同步迟写快速静态RAM)
|
Motorola, Inc.
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
MCM63R818FC3.7R |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
|
Motorola Mobility Holdings, Inc.
|
GS8170DW72C-200 GS8170DW72C-300I GS8170DW36C-333 G |
256K X 72 STANDARD SRAM, 1.8 ns, PBGA209 18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI Technology
|