| PART |
Description |
Maker |
| D4SB10 D4SB20 D4SB40 |
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.
|
乐山无线电股份有限公
|
| D20SB10 D20SB20 D20SB80 D20SB60 D20SB40 D20SB100 |
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified. 最大额定
|
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| D25SB10 D25SB20 D25SB40 D25SB60 |
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified. 最大额定
|
乐山无线电股份有限公
Leshan Radio Company, Ltd.
|
| 161CNQ...SERIES 161CNQ045 161CNQ035 161CNQ 161CNQ0 |
45V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package
40V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package
35V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package
SCHOTTKY RECTIFIER 160 Amp
|
IRF[International Rectifier]
|
| 121NQ045 121NQ050 121NQ 121NQ035 121NQ040 121NQ045 |
45V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package
45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| STB180N55F3 STP180N55F3 |
N-channel 55V - 3.2mヘ - 120A - D2PAK/TO-220 STripFET⑩ Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET?/a> Power MOSFET
N-channel 55V - 3.2m楼? - 120A - D2PAK/TO-220 STripFET垄芒 Power MOSFET
|
STMicroelectronics
|
| 160CMQ 160CMQ035 160CMQ040 160CMQ045 |
45V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package
40V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package
35V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| STV160NF03L02 STV160NF03LT4 |
N-CHANNEL 30V - 0.0019 OHM - 160A POWERSO-10 STRIPFET MOSFET
N-CHANNEL 30V - 0.0019 OHM - 160A POWERSO-10 STRIPFET MOSFET
N-CHANNEL 30V - 0.0019OHM - 160A PowerSO-10 STripFET TM POWER MOSFET
|
ST Microelectronics
STMicroelectronics
|
| STW200NF03 -STW200NF03 |
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET??II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFETII MOSFET N沟道30V 0.002欧姆- 120A条至247超低导通电阻MOSFET的第二STripFET
N-CHANNEL Power MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET⑩ II MOSFET
N-CHANNEL 30V - 0.002 ohm - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET?/a> II MOSFET
N-CHANNEL 30V - 0.002 OHM - 120A TO-247 ULTRA LOW ON-RESISTANCE STRIPFET II MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
|
| 123NQ100 123NQ080 123NQ090 123NQ100R |
100V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package
100V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
80V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| STP150NF55 STB150NF55 STW150NF55 STB150NF55T4 |
N-CHANNEL 55V - 0.005 OHM -120A D2PAK/TO-220/TO-247 STRIPFET II POWER MOSFET
N-CHANNEL 55V - 0.005 OHM -120A D2PAK/TO-220/TO-247 STRIPFET II POWER MOSFET
N-CHANNEL 55V - 0.005 ohm -120A D?PAK/TO-220/TO-247 STripFET⑩ II POWER MOSFET
N-CHANNEL 55V - 0.005 ohm -120A DPAK/TO-220/TO-247 STripFET II POWER MOSFET
N-CHANNEL 55V - 0.005 ohm -120A D2PAK/TO-220/TO-247 STripFET?/a> II POWER MOSFET
N-CHANNEL 55V - 0.005 ohm -120A D2PAK/TO-220/TO-247 STripFET II POWER MOSFET
N-CHANNEL 55V - 0.005 ohm -120A D??AK/TO-220/TO-247 STripFET??II POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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|
