| PART |
Description |
Maker |
| SA8016 |
2.5GHz low voltage fractional-N
|
Philips
|
| SA601 |
Low voltage LNA and mixer - 1GHz
From old datasheet system
|
Philips
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SA8016WC |
SCSI-3 FAST WIDE 3 FT CABLE
2.5GHz low voltage fractional-N synthesizer
|
NXP Semiconductors
|
| BF2030 Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BF1009 Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
From old datasheet system
Silicon N-Channel MOSFET Tetrode (For low noise high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BF1005S Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| SP8782 SP8782A SP8782ADG SP8782BMP DES9208901AC DE |
6.0V; 1GHz 16/17, 32/33 multi-modulus divider
1GHz ± 16/17, ±32/33 Multi-Modulus Divider 1GHz的16/17，32/33多模数分频器
TV 4C 4#16 PIN WALL RECP 1GHz的16/17，32/33多模数分频器
1GHz 16/17/ 32/33 Multi-Modulus Divider
1GHz 16/17 / 32/33 Multi-Modulus Divider
1GHz 16/17 32/33 Multi-Modulus Divider
1GHz 16/17, 32/33 Multi-Modulus Divider
1GHz 梅 16/17, 梅32/33 Multi-Modulus Divider
1GHz ÷ 16/17, ÷32/33 Multi-Modulus Divider
|
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| D2221UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| HA3004 |
3.1GHz - 3.5GHz Low Noise Amplifier
|
HBH Microwave GmbH
|
| NJG1105F |
1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC
|
NJRC[New Japan Radio]
|
