| PART |
Description |
Maker |
| BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diotec Semiconductor AG
Diodes Incorporated
|
| SSM5G09TU-14 |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5G01TU |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| MA721WS |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS40407 |
Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| 1SS321 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SB706D-40 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| MA3ZD12W |
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| DSR07S30U |
Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| 1SS239 |
Silicon Epitaxial Schottky Barrier Type Diode
|
ETC
|
| HN20S01FU |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
