PART |
Description |
Maker |
3SK147 |
GAAS N-CHANNEL DUAL-GATE MES FET
|
Sony Corporation
|
SGM2014AN SGM2014 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
SGM2016AN SGM2016 |
GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
3SK320 |
RF Dual Gate FETs N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
3SK240 E001707 |
N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) From old datasheet system N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
GN2011 |
GaAs N-Channel MES IC
|
Panasonic
|
GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais) Panasonic Semiconductor
|
GN1021 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
|
NE722S01 NE722S01-T1 |
NECs C TO X BAND N-CHANNEL GaAs MES FET
|
California Eastern Labs
|
NE76118-T2 NE76118-T1 NE76118 |
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册,S波段功率GaAs场效应晶体管 0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|