| PART |
Description |
Maker |
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| MAGX-002731-SB1PPR MAGX-002731-030L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-003135-SB1PPR AGX-003135-030L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
120W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| NPT2022 NPT2022-14 |
GaN Wideband Transistor 48 V, 100 W
|
M/A-COM Technology Solu...
|
| MAGX-000040-00500P-15 MAGX-000040-00500P-V2 |
GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solu...
|
| MAGX-000035-09000P-15 |
GaN Wideband 90 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solu...
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| TIP29C TIP30 TIP30C TIP29 TIP29A TIP29B TIP30A TIP |
POWER TRANSISTORS(1.0A/40-100V/30W)
POWER TRANSISTORS(1.0A,40-100V,30W) 功率晶体管（1.0安培,40 - 100V的提0W
|
MOSPEC[Mospec Semiconductor]
Mospec Semiconductor, Corp.
|
| IRIS4009K 2188 IRIS4009 IRISMPS4 |
From old datasheet system
30W Output AC-DC Integrated Switchers in a TO-220 (5-Leads) package
30W Output AC-DC Integrated Switchers in a TO-262 (5-Lead) package
AC-DC flyback power supply, IRIS4009, universal input, 12VOUT, 1A IOUT
|
http://
IRF[International Rectifier]
|
| MAGX-011086-SMBPPR |
GaN Wideband Transistor 28 V, 4 W
|
M/A-COM Technology Solu...
|
| M67741L 67741L M67741 |
RF POWER MODULE 135-160MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
135-160MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
