PART |
Description |
Maker |
126264 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
126254 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
126254H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
128144 |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
127141N |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
128254 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
190130 |
GaAlAs / GaAs LED Chips
|
OSA Opto Light GmbH
|
BA-3S12UW |
red chips, which are made from GaAlAs on GaAs substrate.
|
http:// Bright LED Electronics Corp.
|
Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢?3毫米(T.1)包 GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package From old datasheet system GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix] Vishay Telefunken
|
SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器,Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
PDI-E809 |
GaAlAs High Power IR LED Emitters
|
Advanced Photonix, Inc.
|