| PART |
Description |
Maker |
| CL03-15F CL03-15F-17 |
High Voltage Medium Current Fast Recovery Diode
|
GETAI ELECTRONICS DEVIC...
|
| CL03-08 CL03-08-1 |
High Voltage Medium Current Fast Recovery Diode
|
GETAI ELECTRONICS DEVIC...
|
| HAT2027R |
Silicon N Channel Power MOS FET High Speed Power Switchin
|
HITACHI[Hitachi Semiconductor]
|
| 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| TS78M05CP TS78M05C TS78M05CZ TS78M00 TS78M24CZ TS7 |
3-Terminal Medium Current Positive Voltage Regulator
Analog IC: Voltage Regulators
|
List of Unclassifed Manufacturers
ETC[ETC]
Taiwan Semiconductor Company, Ltd
|
| 2N3441 |
Medium Power Silicon NPN Transistor（Low Saturation Voltage and High Voltage Ratings中功率NPN硅晶体管（低饱和电压，高电压转换速率
|
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| APT50GF60B2RD APT50GF60LRD |
Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
|
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| SBYG20JG SBYG20DG SBYG20GG |
Fast Recovery Pack: SMA
SURFACE MOUNT FAST SWITCHING RECTIFIER VOLTAGE?00 to 600V CURRENT?.5A
|
Gulf Semiconductor
|
