| PART |
Description |
Maker |
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PEMH16 PUMH16 PEMH16-PUMH16-15 |
NPN/NPN resistor-equipped transistors;
NPN-NPN resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN/NPN resistor-equipped transistors R1 = 22 kΩ, R2 = 47 kΩ
|
NXP Semiconductors N.V.
|
| 2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
| PUMH13115 PEMH13-PUMH13-15 |
NPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
NPN/NPN resistor-equipped transistors R1 = 4.7 k? R2 = 47 k?
|
NXP Semiconductors
|
| BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BFG520W BFG520W_X BFG520W/X |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| FCX688B FCX688BTA |
TRANSISTOR NPN 12V 3000MA SOT-89 3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON POWER (SWITCHING) TRANSISTOR
|
Zetex Semiconductor PLC
Zetex Semiconductors
|
| BC548ABC BC547ABC ON0152 BC546 BC548C BC548 BC546B |
Amplifier Transistor NPN
From old datasheet system
CASE 29-04, STYLE 17 TO-2 (TO-226AA)
Amplifier Transistors(NPN Silicon) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| 2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR
300 V, NPN, Si, POWER TRANSISTOR
20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3
30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66
5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66
20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61
10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
| SDT13204 SDT1617 SDT1618 SDT1621 SDT1622 SDT1623 S |
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-39
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-111
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-5
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3
晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一c）|11
晶体管|晶体管|叩| 40V的五（巴西）总裁| 5A条一c）|11
晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一c）|11
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 10A条一（c）|10AC
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|叩| 50V五（巴西）总裁| 5A条一（c）|
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管|叩| 400V五（巴西）总裁| 10A条一（c）|10AC
|
Serpac Electronic Enclosures
Atmel, Corp.
AUK, Corp.
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
|
