| PART |
Description |
Maker |
| RFP45N03L RF1S45N03LSM RF1S45N03L |
45A 30V 0.022 Ohm Logic Level N-Channel Power MOSFETs
45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| STP45N10 STP45N10FI 5473 |
N-Channel 100V-0.027惟-45A- TO-220/TO-220FI Power MOS Transistor(N娌?????MOS?朵?绠?
N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR
From old datasheet system
|
??????浣?
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| AP2302AGN-HF |
Advanced Power MOSFE
|
TY Semiconductor Co., Ltd
|
| RJK0455DPB RJK0455DPB13 RJK0455DPB-00-J5 |
40V, 45A, 3.8m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STW45NM50 |
N-CHANNEL 500V - 0.07Ohm - 45A TO-247 Mdmesh Power MOSFET
|
SGS Thomson Microelectronics
|
| RFP45N06 RF1S45N06 RF1S45N06SM RFG45N06 |
45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| HGT1S20N60C3S HGTP20N60C3 HGTG20N60C3 FN4492 |
45A, 600V, UFS Series N-Channel IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
From old datasheet system
45A/ 600V/ UFS Series N-Channel IGBT
|
Intersil, Corp.
http://
INTERSIL[Intersil Corporation]
|
| BUK7720-55A |
CAPACITOR, 22000UF 25V CAPACITOR, 22000UF 25V; CAPACITANCE:22000UF; VOLTAGE RATING, DC:25V; CAPACITOR DIELECTRIC TYPE:ALUMINIUM ELECTROLYTIC; SERIES:LLS; TEMP, OP. MAX:85(DEGREE C); TEMP, OP. MIN:-40(DEGREE C); TOLERANCE, :20%; RoHS Compliant: Yes
N-channel TrenchMOS standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
