| PART |
Description |
Maker |
| HYS72V32301GR-8 HYS72V64300GR-8 HYS72V128320GR-8 H |
1GB PC100 (2-2-2) 2-bank End-of-Life
SDRAM|64MX72|CMOS|DIMM|168PIN|PLASTIC 内存| 64MX72 |的CMOS |内存| 168线|塑料
SDRAM|128MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
|
Infineon Technologies AG
|
| HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
| MB85502-015 |
CMOS 8M×36Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 8M×36同步动态RAM)
|
Fujitsu Limited
|
| MB8501S064AD-100 |
CMOS 1M×64Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 1M×64位同步动态RAM)
|
Fujitsu Limited
|
| MB85317A-60 |
CMOS 4M?72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M?72浣?????ㄦ?RAM)
|
Fujitsu Limited
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module
3.3 V SDRAM Modules(3.3 V 同步动态RAM模块)
3.3 V SDRAM Module(3.3 V SDRAM 模块)
4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| HYMD116725BL8-H HYMD116725BL8-K HYMD116725BL8-L HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
16Mx72|2.5V|M/K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
