| PART |
Description |
Maker |
| BFC12 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC62 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC41 |
4TH GENERATION MOSFET
|
Seme LAB
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| BFC46 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Seme LAB
|
| USB2227-NE-XX USB2228 USB2227 USB2227-NU-XX USB222 |
4TH GENERATION USB2.0 FLASH MEDIA CONTROLLER WITH INTEGRATED CARD POWER FETS
|
SMSC Corporation
|
| GT60J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT50G321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
|
TOSHIBA
|
| PS21353-N |
DIP - IPM
600V/10A low-loss 4th generation (planar) IGBT inverter bridge for 3 phase DC-to-AC power conversion.
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
