| PART |
Description |
Maker |
| 2-1193269-4 2-1196878-0 |
WIRE, RADIATION-CROSSLINKED, MODIFIED ETFE-INSULATED, LIGHTWEIGHT, GENERAL PURPOSE, 600 VOLT
|
Tyco Electronics
|
| 55A0112 |
WIRE / RADIATION-CROSSLINKED / MODIFIED ETFE-INSULATED / LIGHTWEIGHT / GENERAL PURPOSE / 600 VOLT
|
Tyco Electronics
|
| 2-1191591-9 |
WIRE, RADIATION-CROSSLINKED, MODIFIED ETFE-INSULATED, NORMAL WEIGHT, GENERAL PURPOSE, 600 VOLT
|
Tyco Electronics
|
| OMR7805ST OMR7815ST OMR7805 OMR7805NH OMR7805NM OM |
FIXED POSITIVE REGULATOR, CDSO3
300 kRAD RADIATION TOLERANT 1.5AMP POSITIVE FIXED VOLTAGE REGULATORS 300辐射容错1.5amp积极的固定电压调节器
300 kRAD RADIATION TOLERANT 1.5 AMP POSITIVE FIXED VOLTAGE REGULATORS 300 kRAD辐射容错1.5放大器正，固定式电压调节
RADIATION TOLERANT 1.5 AMP POSITIVE FIXED VOLTAGE REGULATORS 耐辐1.5放大器正固定电压调节
Hi-Rel Fixed Voltage 3-Terminal Positive Radiation Hardened Regulator
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
International Rectifier
List of Unclassifed Man...
|
| HCTS374D HCTS374DMSR HCTS374HMSR HCTS374K HCTS374K |
From old datasheet system
Radiation Hardened Octal D-Type Flip-Flop, Three-State, Positive Edge Triggered
Radiation Hardened Octal Transparent Latch/ Three-State
|
INTERSIL[Intersil Corporation]
|
| 2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT
Simple Drive Requirements
|
International Rectifier
|
| 5962R9571401QXC 5962R9571401QRC FN3040 5962R957140 |
Radiation Hardened 8-Bit Bus Transceiver
From old datasheet system
Radiation Hardened 8-Bit Bus Transceiver OCTAL LINE TRANSCEIVER, CDIP20
Radiation Hardened 8-Bit Bus Transceiver CMOS SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, CDFP20
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| XQVR1000-4CG560M XQVR1000-4CG560V XQVR600-4CB228M |
2.5V Radiation Hardened FPGAs 2.5V的抗辐射FPGA
QPro Virtex 2.5V Radiation Hardened FPGAs
|
Panduit, Corp.
Xilinx, Inc.
|
| 0510670800 51067-0800 |
3.50mm (.138) Pitch Wire-to-Wire and Wire-to-Board Housing, Positive Lock, 8Circuits
|
Molex Electronics Ltd.
|
| 51067-1500 |
3.50mm (.138) Pitch Wire-to-Wire and Wire-to-Board Housing, Positive Lock, 15Circuits
|
Molex Electronics Ltd.
|
