| PART |
Description |
Maker |
| RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM900HC-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| FZ500R65KE3T |
high insulated module
|
Infineon Technologies AG
|
| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UFB60FA60P |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB200FA60P10 |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| UFB280FA40 |
Insulated Ultrafast Rectifier Module, 280 A
|
Vishay Siliconix
|
| UFB120FA40P UFB120FA40 |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
| UFB120FA40P10 |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
| VS-UFB130FA20 |
Insulated Ultrafast Rectifier Module, 130 A
|
Vishay Siliconix
|
