| PART |
Description |
Maker |
| RF1K49223 FN4322 |
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?Power MOSFET
From old datasheet system
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF7642 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 36A条（丁）|63AB
N-Channel NexFET Power MOSFET 8-SON -55 to 150
33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| PPFL3803M |
N Channel MOSFET; Package: TO-254; ID (A): 35; RDS(on) (Ohms): 0.0095; PD (W): 150; BVDSS (V): 30; Rq: 0.83; 35 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| FDT86256 |
150V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 150 V, 1.2 A, 845 mΩ
N-Channel PowerTrench? MOSFET 150 V, 1.2 A, 845 mΩ
|
Fairchild Semiconductor
|
| RJK1536DPE-00-J3 RJK1536DPE-10 |
50 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK(S)-(1), 3 PIN
N-Channel Power MOSFET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| MTP29N15E |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
|
| 2SK1085-M |
N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
|
| BUZ40B BSP372 BSP373 BSS129 BSS101 SN7000 BSS135 |
8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 TO-220, 3 PIN
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
130 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
80 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
Infineon Technologies AG
SIEMENS AG
SIEMENS A G
|
| IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
175°C Operating Temperature
|
International Rectifier
|
| AM30N15-60D |
N-Channel 150-V (D-S) MOSFET
|
Analog Power
|
|
