| PART |
Description |
Maker |
| BUX98AF BUX98AFR1 |
30 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| 2N1890 JAN2N1890S JAN2N1711S JANTX2N1711 |
NPN LOW POWER SILICON TRANSISTOR
NPN Transistor
500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi Corporation
MICROSEMI CORP-LAWRENCE
|
| MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS
From old datasheet system
20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
|
ON Semiconductor
Motorola, Inc
|
| BUH50AK BUH50BA |
4 A, 500 V, NPN, Si, POWER TRANSISTOR
|
ON SEMICONDUCTOR
|
| KSC5021RTU |
5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220, 3 PIN
|
Fairchild Semiconductor, Corp.
|
| MJW16206 ON2059 |
POWER TRANSISTORS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
High and Very High Resolution CRT Monitors
From old datasheet system
|
ON Semiconductor
|
| BUJ301A |
Silicon Diffused Power Transistor 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE.
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Continental Device India Limited
|
| PZTA06 MMBTA06 MPSA06 |
NPN General Purpose Amplifier(NPN通用放大 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SB1516F5/NP 2SA1727F5/NP 2SD1918F5/NP 2SD1767T101 |
3000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0.7 A, 80 V, NPN, Si, POWER TRANSISTOR
3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
5 A, 20 V, PNP, Si, POWER TRANSISTOR
1 A, 32 V, NPN, Si, POWER TRANSISTOR
2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
International Rectifier, Corp.
Dielectric Laboratories, Inc.
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
|
