| PART |
Description |
Maker |
| CR8PM CR8PM-12 |
12.56 A, 600 V, SCR
MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
ITT, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
|
| 2SC3670 E000875 |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM OWER AMPLIFIER APPLICATIONS)
RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 1K/BULK
STOROBO FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM OWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BCR10CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 中功率使用非绝缘型，平面型钝
|
Powerex, Inc.
|
| BCR8PM-14 |
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 中功率使用绝缘型，平面型钝化
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR20AM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR12 BCR12CM BCR12CM-8L |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
400 V, 12 A, TRIAC, TO-220
|
Mitsubishi Electric Semiconductor
|
| CM30MD3-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CR12AM |
MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR16CS |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Powerex Power Semicondu...
Mitsubishi Electric Sem...
|
| BCR16CM |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
