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GM9013 - Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA

GM9013_4570067.PDF Datasheet

 
Part No. GM9013
Description Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA

File Size 240.77K  /  3 Page  

Maker

Guilin Strong Micro-Electronics Co., Ltd.



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: GM90C553TQ
Maker: N/A
Pack: TQFP
Stock: 323
Unit price for :
    50: $11.08
  100: $10.52
1000: $9.97

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 Full text search : Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA
 Product Description search : Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA


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From old datasheet system
NXP SEMICONDUCTORS
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BCW29235 PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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PMBT5550 PMBT5550_3 PMBT5550215 NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
意法半导
STMICROELECTRONICS[STMicroelectronics]
2SC3182    Good Linearity of hFE
Inchange Semiconductor ...
CMBA847G CMBA847E CMBA847F 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
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0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
Continental Device India Limited
 
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