PART |
Description |
Maker |
MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
GL496 |
High Speed Infrared Emitting Diode
|
SHARP[Sharp Electrionic Components]
|
VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm 2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix VISHAY SEMICONDUCTORS
|
VSMF2893SLX01 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMF2893GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMG10850-13 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH
|
Vishay Siliconix
|
VSMB2943SLX01 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
TSHG640009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHG6200 TSHG620007 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
VSMY2850G VSMY2850RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|