Part Number Hot Search : 
XMXXX TND505MD MIP411 12022 N5989 MBT3906 TA78057S 3BR40M
Product Description
Full Text Search

ID621K30 - TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|半桥| 1KV交五(巴西)国际消费电子展| 300我(丙)

ID621K30_4535645.PDF Datasheet


 Full text search : TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|半桥| 1KV交五(巴西)国际消费电子展| 300我(丙)
 Product Description search : TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|半桥| 1KV交五(巴西)国际消费电子展| 300我(丙)


 Related Part Number
PART Description Maker
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
IXYS, Corp.
MG300Q2YS65H 300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba Semiconductor
Toshiba Corporation
IRGTI050U06 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)

FZ1200R12KL4C IGBT-Wechselrichter / IGBT-inverter
IGBT Power Module
eupec GmbH
FZ1200R17KE3 IGBT-Wechselrichter / IGBT-inverter
IGBT Power Module
eupec GmbH
BSM400GA120DL 400A12L C67076-A2302-A70 IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
VDI75-12S3 VID75-12S3 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展| 75A条一(c
Analog Devices, Inc.
GP1600FSS12S TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 1.6KA I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展| 1.6KA一(c
Dynex Semiconductor, Ltd.
CM200DU12H TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 200安培我(丙)
Powerex, Inc.
VII100-12S4 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一(c
Aimtec
IEF21KA1 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五(巴西)国际消费电子展|5A一(c
TE Connectivity, Ltd.
CM50DY28 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 1.4KV五(巴西)国际消费电子展| 50A条一(c
Mitsubishi Electric, Corp.
 
 Related keyword From Full Text Search System
ID621K30 Technolog ID621K30 regulation ID621K30 0pam ID621K30 single ID621K30 Interrupt
ID621K30 vcc ID621K30 processor ID621K30 oscillator ID621K30 description ID621K30 control
 

 

Price & Availability of ID621K30

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.62910485267639