PART |
Description |
Maker |
G6A-274P-ST |
Resistant to electromagnetic interference
|
Omron Electronics LLC
|
ISOEM1001 |
electromagnetic isolation mixed IC
|
YUAN
|
WST-1212S WST-1212S-16 |
THIS SPECIFICATION APPLIES TO THE ELECTROMAGNETIC BUZZER
|
Soberton Inc.
|
WST-1201BX WST-1201BX-16 |
THIS SPECIFICATION APPLIES TO THE ELECTROMAGNETIC BUZZER
|
Soberton Inc.
|
140-90001 |
RIXSON FIREMARK ELECTROMAGNETIC DOOR RELEASE
|
Gamewell-FCI by Honeywell
|
JQC-3F JQC-3FXXX |
Small-scaly power hit the electromagnetic relay
|
List of Unclassifed Manufacturers ETC[ETC] N.A.
|
CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM 150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM 200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
GS881Z18BD-133 GS881Z18BD-133I GS881Z18BD-150 GS88 |
133MHz 8.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 9Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|