PART |
Description |
Maker |
5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
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Advanced Semiconductor, Inc.
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MADS-001339-1279OT MA4E1339 MA4E1339A1-1141TSOT-23 |
SILICON, MEDIUM BARRIER SCHOTTKY, C BAND, MIXER DIODE Silicon Medium Barrier Schottky Diodes`
|
MACOM[Tyco Electronics]
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DME3019-325-008 DME3013-131-012 DMJ3107-364-008 DM |
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, K BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
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DMJ4771-000 DME2029-000 DME2031-000 DME2029-255 DM |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
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CME7660-000 |
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
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NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
KDR357 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
SD101AW SD101BW SD101CW |
SCHOTTKY BARRIER SWITCHING DIODE (SD101AW - SD101CW) SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
DIODES[Diodes Incorporated]
|
KDR331 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR378E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
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Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
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