| PART |
Description |
Maker |
| 2731-100M |
100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz
|
MICROSEMI[Microsemi Corporation]
|
| SM2527-50L |
2500-2700 MHz 100 Watt Linear Power Amplifier
|
Stealth Microwave, Inc.
|
| TW13-D787-001 TW13-D783-001 SKYWORKSSOLUTIONSINC.- |
250 - 2700 MHz Linear, Low Current Power Amplifier Driver 250 - 2700 MHz的线性，低电流功率放大器驱动
|
TE Connectivity, Ltd.
Skyworks Solutions, Inc.
|
| 2731-100M |
100 Watts, 36 Volts, 200us, 10% Radar 2700-3100 MHz S BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
|
| RQJ0202VGDQA RQJ0202VGDQATL-E |
2700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3
Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc.
Renesas Electronics Corporation
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PSMN5R0-100PS |
N-channel 100 V 5 mΩ standard level MOSFET in TO-220 120 A, 100 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| NTD6600N NTD6600N-1 NTD6600N-1G NTD6600NT4 NTD6600 |
Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK
Power MOSFET 100 V, 12 A, N-Channel, Logic Level DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 12 A, 100 V, 0.146 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
|
