| PART |
Description |
Maker |
| ET9000 |
486 WRITE BACK CACHE AT SINGLE CHIP
|
ETEQ
|
| A80486DX4 |
Embedded Write Back Enhanced
|
Intel
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CD4503BC CD4503BCM CD4503BCN CD4503BCSJ CD4503 |
SH2A Series, 7263 Group, FPU, 2-ch CMT, RTC, 4-ch SSI, CD-ROM, USB, USB Host, SRC, 1024x1024 LCDC, UBC, cache (I-cache:8KB; D-cache:8KB; 4 way set associative) FP-240; Vcc= 3.0 to 3.6 volts, Temp= -40 to 85 C; Package: PRQP0240KC-A 六角非反相三态缓冲器
Hex Non-Inverting 3-STATE Buffer
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| AA-0233-1H |
482,486 Hrs @ 30 GB
|
JMK Inc.
|
| W19B160BTT7H |
2.7~3.6-volt write (program and erase) operations, Fast write operation
|
Winbond
|
| AS5SP1M18DQ AS5SP1M18DQ-30ET AS5SP1M18DQ-30IT AS5S |
1M X 18 CACHE SRAM, 3.5 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100
1M X 18 CACHE SRAM, 4 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100
Plastic Encapsulated Microcircuit 18Mb, 1M x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
Austin Semiconductor, Inc
Micross Components
|
| MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| WD61C96A |
Single-Chip VLSI Peripheral Cache Manager
MicroProcessor
|
ETC
Western Digital
|
| IS61LPD25636T-166TQI IS61LPD25636J-166B IS61LPD512 |
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K X 36 CACHE SRAM, 3.5 ns, PBGA119
512K X 18 CACHE SRAM, 2.8 ns, PBGA119
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| AS4C32M16MS-6BIN AS4C32M16MS-7BCN |
Multiple Burst Read with Single Write Operation
|
Alliance Semiconductor ...
|
| GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209
36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
|
