| PART |
Description |
Maker |
| UPA1857 UPA1857GR-9JG UPA1857GR-9JG-E2 UPA1857GR-9 |
Nch enhancement type power MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA2750GR UPA2750GR-E2 UPA2750GR-E1 |
Nch enhancement-type MOS FET (Dual type)
SWITCHING N-CHANNEL POWER MOSFET
|
NEC[NEC]
|
| UPA2701GR UPA2701GR-E2 UPA2701GR-E1 UPA2701TP-E2 U |
SWITCHING N- AND P-CHANNEL POWER MOS FET
SWITCHING N-CHANNEL POWER MOSFET
Nch enhancement-type MOS FET
|
NEC
|
| UPA1770 UPA1770G PA1770 G14055EJ1V0DS00 UPA1770G-E |
P-channel enhancement type power MOS FET(Dual type)
SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
From old datasheet system
|
NEC[NEC]
|
| 2SK2484 |
Nch power MOSFET MP-25 900V/5A
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2365 2SK2366 2SK2366-Z 2SK2365-S 2SK2365-Z |
N-channel enhancement type DMOS
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2360 2SK2359 TC-2501 2SK2359-Z |
N-channel enhancement type DMOS
From old datasheet system
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| UPA1731G-E1 UPA1731G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| UPA1951 UPA1951TE UPA1951TE-T2 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement type MOS FET
|
NEC Corp.
|
| UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1 |
Pch enhancement-type MOS FET (SBD)
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
