| PART |
Description |
Maker |
| 49LF002 SST49LF003A-33-4C-NH SST49LF003A-33-4C-WH |
MB 6C 6#20 SKT PLUG
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 384K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 256K X 8 FLASH 3V PROM, 11 ns, PQCC32
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub 512K X 8 FLASH 3V PROM, 11 ns, PQCC32
|
Silicon Storage Technology Inc
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| F28F008SA-120 E28F008SA-120 E28F008SA-85 F28F008SA |
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 8兆（1兆位× 8FlashFileTM记忆
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 120 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 85 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFile MEMORY
|
Intel, Corp.
Intel Corp.
Intel Corporation
|
| SST39VF1601 SST39VF6401-70-4C-B1K SST39VF6402-70-4 |
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus
|
http://
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| DA28F016XS15 E28F016XS20 28F016XS DA28F016XS-15 DA |
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
|
INTEL[Intel Corporation]
|
| SST39SF010A-70-4C-NHE SST39SF010A-70-4C-PHE SST39S |
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
| 28F016SA |
16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M1 Mx 16, 2 Mx 8) FlashFile存储
|
Intel Corp.
|
| SST39SF040-70-4C-NHE SST39SF020A-70-4I-WHE SST39SF |
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Microchip Technology
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
