| PART |
Description |
Maker |
| HI4-0508A-8 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection; Temperature Range: -55°C to 125°C; Package: 20-LCC 8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20
|
Intersil, Corp.
|
| FDS898407 FDS8984 |
N-Channel PowerTrench? MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| MAX306C_D MAX30610 MAX307EUI-T MAX306EUI |
Precision, 16-Channel/Dual 8-Channel, High-Performance, CMOS Analog Multiplexers 8-CHANNEL, DIFFERENTIAL MULTIPLEXER, PDSO28
|
Maxim Integrated Products, Inc.
|
| FDG6313N FDG6313NNL |
25V Dual N-Channel, Digital FET 500 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
|
| SIZ728DT-T1-GE3 |
N-Channel 25 V (D-S) MOSFETs
16 A, 25 V, 0.0077 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR-6
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| FDC6420 FDC6420C FDC6420CD84Z |
20V N & P-Channel PowerTrench MOSFETs
3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| MAX398CSEG55 |
Precision, 8-Channel/Dual 4-Channel, Low-Voltage, CMOS Analog Multiplexers 8-CHANNEL, SGL ENDED MULTIPLEXER, PDSO16
|
Maxim Integrated Products, Inc.
|
| IXTL2X240N055T |
140 A, 55 V, 0.0044 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET ISOPLUS, I5PAC-5
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
|
