| PART |
Description |
Maker |
| 2SK30ATM |
Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Toshiba Semiconductor
|
| 2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| HA5025 HA5025IB HA5025IP FN3591 HA5025EVAL HA5340 |
Triple/ 125MHz Video Amplifier
High Speed/ Low Distortion/ Precision Monolithic Sample and Hold Amplifier
Quad/ 560MHz/ Low Power/ Video Operational Amplifier
Quad/ 125MHz Video Current Feedback Amplifier
Quad, 125MHz Video Current Feedback Amplifier
Quad 125MHz Video Current Feedback Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| CD1353CP |
2.4W Audio Amplifier / SIF Amplifier and Detector
2.4W AUDIO AMPLIFIER, SIF AMPLIFIER AND DETECTOR FOR TV SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT
|
List of Unclassifed Manufacturers
ETC[ETC]
Shaoxing
|
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| RF3330 RF3330PCBA |
IF GAIN CONTROLLED AMPLIFIER 中频增益控制放大
IF GAIN CONTROLLED AMPLIFIER RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| Q68000-A8882 CGY180 |
Power Amplifier (DECT, PCS)
From old datasheet system
GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
