| PART |
Description |
Maker |
| RJQ6020DPM |
600V - 20A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6025DPH-E0 RJK6025DPH-E0T2 |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6002DJE-00Z0 RJK6002DJE-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6011DJE-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6006DPP-E0 RJK6006DPP-E0-15 |
600V - 5A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6015DPM-00T1 |
600V - 21A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S4DPE-00-J3 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| AOT20S60 |
600V 20A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| RJK0657DPA RJK0657DPA-00-J5A |
60V, 20A, 13.6m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| RJQ6003DPM-00T0 RJP6003DPM |
600V - 20A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
