| PART |
Description |
Maker |
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG150J1BS11 E002085 |
Silicon N channel IGBT(N娌??缁?????????朵?绠?
From old datasheet system
N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Silicon N channel IGBT(N沟道绝缘栅双极型晶体
|
Toshiba Semiconductor
Toshiba Corporation
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS)
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| MG75J1ZS40 E002382 |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MG15Q6ES51 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 硅N通道IGBT的（不适用沟道绝缘栅双极型晶体管）
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba, Corp.
Toshiba Semiconductor
|
| IXDN75N120 L209 |
High Voltage IGBT
IGBT Discretes: NPT IGBT
From old datasheet system
High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| GT15M321 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| RJH60F4DPK11 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
