| PART |
Description |
Maker |
| NCP105006 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ON Semiconductor
|
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
| C9016-2X C9547 |
HIGH-SPEED GATED IMAGE INTENSIFIER UNITS 高速门控像增强机组
|
Hamamatsu Photonics K.K.
|
| TPD4144AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| LT3587 LT3587EUD-PBF LT3587EUD-TRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
| LT3651-4.2 |
Monolithic 4A High Voltage Li-Ion Battery Charger
|
Linear Technology
|
| LT3512HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
