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CR6PM-12 - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

CR6PM-12_4383099.PDF Datasheet


Part No.	CR6PM-12 CR6PM-8
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
File Size	76.68K / 5 Page
Maker	Mitsubishi Electric Corporation
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Full text search : Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

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Related keyword From Full Text Search System

CR6PM-12 MARKING	CR6PM-12 Electronics	CR6PM-12 performance	CR6PM-12 Characteristic	CR6PM-12 semiconductor
CR6PM-12 Purpose	CR6PM-12 pulse	CR6PM-12 Outputs	CR6PM-12 Differential	CR6PM-12 volts

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