PART |
Description |
Maker |
CMLM7405 |
MULTI DISCRETE MODULESURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
CMLM7405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE MULTI DISCRETE MODULE??SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
|
30CTH02 30CTH02-1 30CTH02FP 30CTH02S |
200V 20A HyperFast Discrete Diode in a TO-220AB package 300V 20A HyperFast Discrete Diode in a TO-262 package 300V 20A HyperFast Discrete Diode in a TO-220 FullPak package 200V 30A HyperFast Discrete Diode in a D2-Pak package
|
International Rectifier
|
ESJC30 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0551-3 00; Connector Type: Wire; Contact Gender HIGH VOLTAGE SILICON DIODE
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
HGT2100-100 HGT2100-1000 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0684-7 53; Contact Mating Area Plating: Gold 工业控制IC Industrial Control IC 工业控制IC
|
IDEC, Corp.
|
MBRD320 MBRD330 MBRD340 MBRD320TR MBRD340PBF |
Schottky (Diodes & Rectifiers) 3.0 Amp 40 Volt SCHOTTKY RECTIFIER 30V 3A Schottky Discrete Diode in a D-Pak package 40V 3A Schottky Discrete Diode in a D-Pak package 20V 3A Schottky Discrete Diode in a D-Pak package
|
Vishay Semiconductors IRF[International Rectifier]
|
2SJ602 2SJ602-S 2SJ602-ZJ 2SJ602-Z |
MOS FIELD EFFECT TRANSISTOR Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0632-3 00; No. of Positions: 30; Connector Type Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263
|
NEC Corp.
|
2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE P-channel enhancement type
|
NEC Corp. NEC[NEC]
|
6833 7100 7101 3102 7102 |
T- Subminiature Lamps Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 541-0262-3 06; Connector Type: Wire; Contact Gender Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 541-0222-9 00; Connector Type: Wire; Contact Gender
|
International Light Technologies Inc.
|