PART |
Description |
Maker |
2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS HIGH VOLTAGE HIGH SPEED SWITCHING BIPOLAR POWER GENERAL PURPOSE TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
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友顺科技股份有限公司 UTC[Unisonic Technologies]
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2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS From old datasheet system FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
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Toshiba Corporation Toshiba Semiconductor
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2SK1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
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TOSHIBA[Toshiba Semiconductor]
|
MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
2SK2723 2SK2723JM |
Nch power MOSFET MP-45F high-speed switching SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2SJ550 2SJ550L 2SJ550S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor] http://
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LTC1430ISPBF LTC1430-15 |
High Power Step-Down Switching Regulator Controller Isolated Flyback Switching Regulator with 9V Output SWITCHING CONTROLLER, 300 kHz SWITCHING FREQ-MAX, PDSO16
|
Linear Technology, Corp.
|
MP4703 E002536 |
HIGH POWER , HIGH SPEED SWITCHING APPLICATIONS HA MMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING From old datasheet system
|
Toshiba
|
2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply) High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A) From old datasheet system Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) High-voltage Switching Transistor ( 400V, 0.5A)
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ROHM[Rohm]
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MG75Q1JS40 E002405 |
Silicon N channel IGBT(N沟道绝缘栅双极型晶体 N通道IGBT的(不适用沟道绝缘栅双极型晶体管) N CHANNEL IGBT (HIGH POWER SWITCHING / CHOPPER APPLICATIONS) N CHANNEL IGBT (HIGH POWER SWITCHING CHOPPER APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
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Toshiba, Corp. TOSHIBA[Toshiba Semiconductor]
|
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
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Toshiba Semiconductor Toshiba Corporation
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