| PART |
Description |
Maker |
| CJP02N60 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP07N20 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology Co., Ltd
JIANGSU[Jiangsu Changjiang Electronics]
|
| CJP02N60 |
Power Filed Effect Transistor
|
Jiangsu Changjiang Electronics Technology
|
| CJP02N60 |
Power Filed Effect Transistor
|
江苏长电科技股份有限公司
|
| CJU05N25 |
MOSFET MOSFET
Power Filed Effect Transistor
|
Glenair, Inc.
JIANGSU[Jiangsu Changjiang Electronics]
|
| IRFD112 IRFD113 |
(IRFD112 / IRFD113) POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
|
GE Solid State
|
| MTW10N40E |
TMOS E-FET POWER FIELD EFFECT TRANSISTOR 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Motorola Mobility Holdings, Inc.
|
| MTM25P10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
| MTD1N40 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| CMT14N50 CMT14N50N3P |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp.
|
| MTM20P10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC
Motorola, Inc
|
| MRF18090A MRF18090AR3 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
