| PART |
Description |
Maker |
| AM24S-3.3-13 AM48S-3.3-13 AM48S-2.5-10 AM48S-15-20 |
7ns, Low Power, Single Supply, Ground-Sensing Comparator; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
90NS, FLATPACK, 883C; LEV B COMPLIANT(EEPROM)
Analog IC
90NS, PLCC, IND TEMP(EEPROM)
70NS, PDIP, COM TEMP(EEPROM) 模拟IC
|
Glenair, Inc.
|
| AM4J-67206L-12 AM4J-67206L-25 AM4J-67206V-15 AM4J- |
90NS, LCC, 883C; LEVEL B FULLY COMPLIANT(EEPROM)
90NS, TSOP, IND TEMP, GREEN(EEPROM)
120NS, PLCC, AUTO TEMP(EEPROM)
120NS, CERDIP, 883C; LEV B COMPLIANT(EEPROM)
120NS, LCC, 883C; LEV B FULLY COMPLIANT(EEPROM)
8-Bit Video ADC
Switched-Capacitor Voltage Converter with Regulator; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C
Single Supply RS232C Line Driver/Receiver(?????μ?o?RS232C ?o?????????¨???2???2??????)
10 Bit, 25MSPS, 135mW ADC
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Low-Voltage, Low On-State Resistance SPST CMOS Analog Switches 5-SOT-23 -40 to 85
x9 Asynchronous FIFO X9热卖异步FIFO
Single Supply RS232C Line Driver/Receiver(氓??莽?碌忙潞?RS232C 莽潞驴忙?露氓??氓?篓茂录?2氓??2忙?露茂录?)
|
Kingbright, Corp.
|
| AT45DB161D-TU AT45DB161D-TU-2.5 AT45DB161D-CU AT45 |
TSOP, IND TEMP, GREEN(DATA FLASH) 16M X 1 FLASH 2.7V PROM, PDSO28
|
聚兴科技股份有限公司
Atmel, Corp.
|
| AT29C020-70TC AT29C020-70TI AT29C020-70JI |
70NS, TSOP, COM TEMP(FLASH) 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
70NS, TSOP, IND TEMP(FLASH) 256K X 8 FLASH 5V PROM, 70 ns, PDSO32
70NS, PLCC, IND TEMP(FLASH) 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
|
Atmel, Corp.
|
| K4S561632E-UC75 K4S561632E-UL75 K4S561632E-UL60 K4 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与内存规格4 TSOP-II免费（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H280438F-ULA2 K4H280838F-UCB3 K4H280838F-ULB3 K4 |
128Mb F-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅DDR SDRAM的规6 TSOP-II免费（符合RoHS
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| C2111 P2111 AM9111C/BVA AM91L11A/BVA AM91L11C/BVA |
Turbo 2 ultrafast high voltage rectifier
10MHZ, SOIC, IND TEMP, 1.8V(MCU AVR)
20MHZ, PDIP, IND TEMP, 5V(MCU AVR)
2MHz, NARROW SOIC, IND TEMP, GREEN,(MCU AVR)
10MHZ, PDIP, IND TEMP, 1.8V(MCU AVR)
x4 SRAM x4的SRAM
|
Energizer Holdings, Inc.
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| PUMA2US2500I-2512 PUMA2US2500I-2510 PUMA2US2500I-2 |
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 EIAJ SOIC, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 SOIC, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7(SERIAL EE)
10MS, 8 TSSOP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 SOIC, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
10MS, 8 MINI-MAP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, 8 LAP, IND TEMP, GREEN, 2.7V(SERIAL EE)
SRAM/EPROM 静态存储器/存储
10MS, DIE, 1.8V, 11 MILS THICKNESS(SERIAL EE) 静态存储器/存储
|
TDK, Corp.
TE Connectivity, Ltd.
|
| TC74HC251AP TC74HC251AF TC74HC251 |
Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection; Package: TSOP-6; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 8通道多路复用器（3国）
8 CHANNEL MULTIPLEXER (3 STATE)
|
Toshiba, Corp.
Toshiba Semiconductor
|
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