PART |
Description |
Maker |
SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec) TT electronics Semelab Limited Seme LAB
|
U4090B-PFNY |
Monolithic Integrated Feature Phone Circuit EMI Improved IC MONO FEATURE PHONE EMI 44SSOP TELEPHONE MULTIFUNCTION CKT, PDSO44
|
http:// ATM Electronic, Corp.
|
IRFY430M-T257 |
Publications, Books RoHS Compliant: NA N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited Semelab(Magnatec) SEME-LAB[Seme LAB]
|
IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
IRF9530S IRF9530SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
KFX0414T |
900MHz Cordless Phone SPECIFICATIONS FOR SAW DUPLEXER (RF DUPLEXER FOR CORDLESS PHONE CIS)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
KFX0327T |
900MHz Cordless Phone SPECIFICATIONS FOR SAW DUPLEXER (RF DUPLEXER FOR CORDLESS PHONE ISM)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
S05K75 S20S275B S05K115 S05K130 S05K140 S05K175 S0 |
ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES
|
List of Unclassifed Man... N.A. ETC[ETC] List of Unclassifed Manufacturers
|
SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
APT5024SLL APT5024BLL |
Volts:500V RDS(ON):0.24Ohms ID(cont:)22Amps|MOSFETs 电压00V电压的RDS(ON):0.24Ohms编号(续:)22安培| MOSFET
|
Advanced Power Technology, Ltd.
|