| PART |
Description |
Maker |
| PBRP113ZT PBRP113ZT215 |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips
|
| PBSS304PZ |
60 V, 4.5 A PNP low V_CEsat (BISS) transistor
60 V, 4.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBSS5520X PBSS5520X-15 |
20 V, 5 A PNP low VCEsat (BISS) transistor 20伏，5安PNP型低饱和压降BISS）晶体管
20 V, 5 A PNP low VCEsat (BISS) transistor
PNP low VCEsat (BISS) transistor 20 V, 5 A
|
NXP Semiconductors N.V.
|
| PBSS5350SS PBSS4350SPN PBSS4350SS PBSS5350SS115 |
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
NXP[NXP Semiconductors]
|
| PBSS5112PAP |
120 V, 1 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5230PAP |
30 V, 2 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5130PAP |
30 V, 1 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5260PAP |
60 V, 2 A PNP/PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV9040T09 |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor 500 0.25安PNP高电压低饱和压降(BISS) 晶体
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBLS1501V PBLS1501Y |
15 V PNP BISS loadswitch
|
NXP Semiconductors N.V.
|
