| PART |
Description |
Maker |
| 19003-0045 19023-0056 |
.250X.032 94V-0 FEM. FIQD CONT (BB-2206V 2 mm2, PUSH-ON TERMINAL
MALE FIQD 14-16 AWG LOOSE 2 mm2, TAB TERMINAL
|
Molex, Inc.
|
| 19003-0048 19003-0057 19003-0053 19003-0056 19003- |
.250 X.032 FML FIQD EXP CONT.(BB-2206XC) 2 mm2, PUSH-ON TERMINAL
.187X.032 FEMALE AQUA FIQD CONT BB-2208C 2 mm2, PUSH-ON TERMINAL
.187X.020 FEMALE FIQD EXPANDED (BB-2207X 2 mm2, PUSH-ON TERMINAL
.187 X .032 FEMALE FIQD (BB-2208) 2 mm2, PUSH-ON TERMINAL
.250 X.032 FML FIQD EXP TAPED(BB-2206XT) 2 mm2, PUSH-ON TERMINAL
190030058 2 mm2, PUSH-ON TERMINAL
.205 X .020 BLUE FIQD CONT BB-2215C 2 mm2, PUSH-ON TERMINAL
.250 X.032 FML FIQD EXP TAPED(AA-2201XT) 0.8 mm2, PUSH-ON TERMINAL
190030060 2 mm2, PUSH-ON TERMINAL
.187 X .020 FEMALE FIQD CONT. (AA-2202C) 0.8 mm2, PUSH-ON TERMINAL
.250 X .032 FEMALE FIQD CON 2 mm2, PUSH-ON TERMINAL
|
Molex, Inc.
TE Connectivity, Ltd.
MOLEX INC
|
| MA1078-2 |
From old datasheet system
For DCS1800 - 20W Power Amplifier
.187X.032 FEM.QD AVIKRIMP (P-8139-032)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 19007-0081 |
.187X.032 FIQD FLAG V-O STRIP(BB-2225VZ) 16 mm2, BRASS, TIN FINISH, PUSH-ON TERMINAL
|
Molex, Inc.
|
| NF-NF50 |
Coaxial Adapter, N-FEM to N-FEM
|
Mini-Circuits
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
| HUF76113DK8 FN4387 |
6A/ 30V/ 0.032 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET
6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
From old datasheet system
6A, 30V, 0.032 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(6A, 30V, 0.032 Ω,双N沟道,逻辑电平,UltraFET功率MOS场效应管)
|
Intersil Corporation
|
| SKY77521 |
TX-RX FEM
|
Skyworks Solutions
|
| 354341 |
Fem. Connector E 48 Solder
|
ERNI Electronics
|
|
