PART |
Description |
Maker |
1N5223BT50R 1N5231BTR 1N5231BT26A 1N5231BT50A 1N52 |
surface mount silicon Zener diodes 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 16V, 0.5W Zener Diode 33V, 0.5W Zener Diode 12V, 0.5W Zener Diode 13V, 0.5W Zener Diode 10V, 0.5W Zener Diode 25V, 0.5W Zener Diode 22V, 0.5W Zener Diode 30V, 0.5W Zener Diode 15V, 0.5W Zener Diode 27V, 0.5W Zener Diode 6.8V, 0.5W Zener Diode 11V, 0.5W Zener Diode 6.0V, 0.5W Zener Diode 4.7V, 0.5W Zener Diode 8.7V, 0.5W Zener Diode 6.2V, 0.5W Zener Diode 8.2V, 0.5W Zener Diode 9.1V, 0.5W Zener Diode 7.5V, 0.5W Zener Diode 4.3V, 0.5W Zener Diode 3.9V, 0.5W Zener Diode 3.6V, 0.5W Zener Diode 2.4V, 0.5W Zener Diode 3.3V, 0.5W Zener Diode 5.6V, 0.5W Zener Diode 5.1V, 0.5W Zener Diode 2.7V, 0.5W Zener Diode 14V, 0.5W Zener Diode 18V, 0.5W Zener Diode 20V, 0.5W Zener Diode 24V, 0.5W Zener Diode 19V, 0.5W Zener Diode
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Fairchild Semiconductor, Corp.
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WT-Z224V-AU4 |
Zener Diode Chips (Dual Pad) for ESD Bidrectional Protection
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Weitron Technology
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1N5232A 1N5221A 1N5221B 1N5221C 1N5221D 1N5270B 1N |
22 V, 5.6 mA, zener diode 13 V, 9.5 mA, zener diode 36 V, 3.4 mA, zener diode 3.3 V, 20 mA, zener diode 30 V, 4.2 mA, zener diode 15 V, 8.5 mA, zener diode 8.7 V, 20 mA, zener diode 2.5 V, 20 mA, zener diode 62 V, 2.0 mA, zener diode 3.3 V, 20 mA, zener diode 19 V, 6.6 mA, zener diode 33 V, 3.8 mA, zener diode 56 V, 2.2 mA, zener diode 11 V, 20 mA, zener diode 28 V, 4.5 mA, zener diode 24 V, 5.2 mA, zener diode 60 V, 2.1 mA, zener diode 60 V, 2.1 mA, zener diode 39 V, 3.2 mA, zener diode 39 V, 3.2 mA, zener diode 17 V, 7.4 mA, zener diode 14 V, 9.0 mA, zener diode 12 V, 20 mA, zener diode 18 V, 7.0 mA, zener diode 5.6 V, 20 mA, zener diode 82 V, 1.5 mA, zener diode 87 V, 1.4 mA, zener diode 4.7 V, 20 mA, zener diode 47 V, 2.7 mA, zener diode 7.5 V, 20 mA, zener diode 110 V, 1.1 mA, zener diode 2.8 V, 20 mA, zener diode 24 V, 5.2 mA, zener diode 28 V, 4.5 mA, zener diode 25 V, 5.0 mA, zener diode 1N52 SERIES ZENER DIODES FKC 2.5/6-STF Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 50μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 250μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管) Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆) 2.5 V, 20 mA, zener diode 36 V, 3.4 mA, zener diode 9.1 V, 20 mA, zener diode 11 V, 20 mA, zener diode 62 V, 2.0 mA, zener diode 110 V, 1.1 mA, zener diode 3.9 V, 20 mA, zener diode 82 V, 1.5 mA, zener diode 16 V, 7.8 mA, zener diode 12 V, 20 mA, zener diode 3.9 V, 20 mA, zener diode 43 V, 3.0 mA, zener diode 68 V, 1.8 mA, zener diode 68 V, 1.8 mA, zener diode 56 V, 2.2 mA, zener diode 30 V, 4.2 mA, zener diode 43 V, 3.0 mA, zener diode 6.2 V, 20 mA, zener diode 3.0 V, 20 mA, zener diode 33 V, 3.8 mA, zener diode 14 V, 9.0 mA, zener diode 8.2 V, 20 mA, zener diode 2.8 V, 20 mA, zener diode 6.8 V, 20 mA, zener diode 75 V, 1.7 mA, zener diode 10 V, 20 mA, zener diode 47 V, 2.7 mA, zener diode 75 V, 1.7 mA, zener diode 51 V, 2.5 mA, zener diode 100 V, 1.3 mA, zener diode 8.7 V, 20 mA, zener diode 22 V, 5.6 mA, zener diode
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LRC[Leshan Radio Company] 乐山无线电股份有限公 Leshan Radio Company, Ltd.
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1N5919B 1N5919BRL 1N5930BRL 1N5940BRL 1N5921BRL 1N |
Zener 5.6V 3W 5% Zener 16V 3.0W 5% 3 Watt DO-41 Surmetic-30 Zener Voltage Regulators Zener 6.8V 3W 5% Zener 47V 3.0W 5% Zener 12V 3.0W 5% Zener 56V 3.0W 5% Zener 20V 3.0W 5% Zener 33V 3.0W 5% Zener Diode Zener 180V 3.0W 5% Zener 160V Zener 200V 3.0W 5% Zener 30V 3.0W 5% Zener 62V 3.0W 5%
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ON Semiconductor
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2CW032200YQ 2CW032200YQ-2 2CW032200YQ-5 2CW032082Y |
2CW032XXXYQ SERIES ZENER DIODE CHIPS FOR GLASS SEAL 2CW032XXXYQ SERIES ZENER DIODE CHIPS FOR GLASS SEAL
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Silan Microelectronics Join... Silan Microelectronics Joint-stock
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2CW032560YQ-2 2CW032560YQ-5 |
ZENER DIODE CHIPS
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Silan Microelectronics
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1N5946BRL 1N5946B 1N5924B 1N5925B 1N5956B 1N5956BR |
Zener 75V 3.0W 5% Zener 9.1V 3W 5% Zener 10V 3.0W 5% Zener 3.0W 5% Zener 36V 3.0W 5% Zener 120V 3.0W 5% Zener 30V 3.0W 5% Zener 4.7V 3W 5% Zener 6.2V 3W 5% Zener Diode Zener 12V 3.0W 5% Zener 22V 3.0W 5%
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ON Semiconductor
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2CW032200JL-R 2CW032082JL-R 2CW032300JL-R 2CW03206 |
2CW032XXXJL-R SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE WITH ASYMMETRY LIMITS 2CW032XXXJL-R SERIES ZENER DIODE CHIPS FOR PLASTIC PACKAGE WITH ASYMMETRY LIMITS
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Silan Microelectronics Joint-stock
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DF3A6.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.94 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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DF3A3.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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DF2S6.8FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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DF2S5.6S |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.76 to 11.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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