PART |
Description |
Maker |
UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM x16 Fast Synchronous SRAM x18 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
AS7C33256PFS16A-133TQI AS7C33256PFS18A-183TQI AS7C |
x18 Fast Synchronous SRAM x18快速同步SRAM x16 Fast Synchronous SRAM x16快速同步SRAM
|
Alliance Semiconductor, Corp.
|
CY7C1373AV25-66AC CY7C1373AV25-66BGC CY7C1371AV25- |
x36 SRAM x36的SRAM x18 SRAM x18的SRAM
|
Microsemi, Corp. EPCOS AG
|
IBM0418A86SQKA IBM0418A86LQKA IBM0418A86LQKA-6 IBM |
8 Mb Synchronous Communication SRAM(8M位同步流水线式通讯静态RAM) 8兆同步通信的SRAM00万位同步流水线式通讯静态内存) x36 Fast Synchronous SRAM x36快速同步SRAM x18 Fast Synchronous SRAM x18快速同步SRAM
|
IBM Microeletronics International Business Machines, Corp. Advanced Interconnections, Corp.
|
M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
HM62W1664HBJP-25 HM62W1664HBJP30 |
x16 SRAM CACHE SRAM, PDSO44
|
|
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product CANMS3470L16-23PL/C 16兆x16插槽,开机区块快闪记忆体Mbit的SRAM56Kb x16,内存产品多
|
意法半导 STMicroelectronics N.V.
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
LRS1387 |
64M ( X16) Dual Work Boot Block Flash & 8M ( X16) SRAM
|
SHARP
|
HY62UF16800B |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800
|
Alpha Industries, Inc.
|